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har dwar e documentation t w o - w i r e h a l l - e f f e c t s e n s o r f a m i l y hal ? 556, hal 560, hal 566 edition aug. 11, 2009 dsh000026_004en data sheet
hal55x, hal56x data sheet 2 aug. 11, 2009; dsh000026_004en micronas copyright, warranty, and limitation of liability the information and data contained in this document are believed to be accurate and reliable. the software and proprietary information contained therein may be protected by copyright, patent, trademark and/or other intellectual property rights of micronas. all rights not expressly granted remain reserved by micronas. micronas assumes no liability for errors and gives no warranty representation or guarantee regarding the suitability of its products for any particular purpose due to these specifications. by this publication, micronas does not assume respon- sibility for patent infringements or other rights of third parties which may result from its use. commercial con- ditions, product availability and delivery are exclusively subject to the respective order confirmation. any information and data which may be provided in the document can and do vary in different applications, and actual performance may vary over time. all operating parameters must be validated for each customer application by customers? technical experts. any new issue of this document invalidates previous issues. micronas reserves the right to review this doc- ument and to make changes to the document?s content at any time without obligation to notify any person or entity of such revision or changes. for further advice please contact us directly. do not use our products in life-supporting systems, aviation and aerospace applications! unless explicitly agreed to otherwise in writing between the parties, micronas? products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applica- tions intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death could occur. no part of this publication may be reproduced, photo- copied, stored on a retrieval system or transmitted without the express written consent of micronas. micronas trademarks ? hal micronas patents choppered offset compensation protected by micro- nas patents no. us5260614, us5406202, ep0525235 and ep0548391. third-party trademarks all other brand and product names or company names may be trademarks of their respective companies.
contents page section title micronas aug. 11, 2009; dsh000026_004en 3 data sheet hal55x, hal56x 4 1. introduction 4 1.1. features 4 1.2. family overview 5 1.3. marking code 5 1.4. operating junction temperature range 5 1.5. hall sensor package codes 5 1.6. solderability and welding 6 2. functional description 7 3. specification 7 3.1. outline dimensions 12 3.2. dimensions of sensitive area 12 3.3. positions of sensitive areas 12 3.4. absolute maximum ratings 12 3.4.1. storage and shelf life 13 3.5. recommended operating conditions 14 3.6. characteristics 15 3.7. magnetic characteristics overview 18 4. type description 18 4.1. hal556 20 4.2. hal560 22 4.3. hal566 24 5. application notes 24 5.1. application circuit 24 5.2. extended operating conditions 24 5.3. start-up behavior 25 5.4. ambient temperature 25 5.5. emc and esd 26 6. data sheet history
hal55x, hal56x data sheet 4 aug. 11, 2009; 000026_004endsh micronas two-wire hall-effect sensor family sensor family in cmos technology release note: revision bars indicate significant changes to the previous edition. 1. introduction this sensor family consists of different two-wire hall switches produced in cmos technology. all sensors change the current consumption depending on the external magnetic field and require only two wires between sensor and evaluation circuit. the sensors of this family differ in the magnetic switching behavior and switching points. the sensors include a temperature-compensated hall plate with active offset compensation, a comparator, and a current source. the comparator compares the actual magnetic flux through the hall plate (hall volt- age) with the fixed reference values (switching points). accordingly, the current source is switched on (high current consumption) or off (low current consumption). the active offset compensation leads to constant mag- netic characteristics in the full supply voltage and tem- perature range. in addition, the magnetic parameters are robust against mechanical stress effects. the sensors are designed for industrial and automo- tive applications and operate with supply voltages from 4 v to 24 v in the junction temperature range from ? 40 c up to 140 c. all sensors are available in the smd-package sot89b-1 and in the leaded versions to92ua-1 and to92ua-2. 1.1. features ? current output for two-wire applications ? junction temperature range from ? 40 c up to 140 c. ? operates from 4 v to 24 v supply voltage ? operates with static magnetic fields and dynamic magnetic fields up to 10 khz ? switching offset compensation at typically 145 khz ? overvoltage and reverse-voltage protection ? magnetic characteristics are robust against mechanical stress effects ? constant magnetic switching points over a wide sup- ply voltage range ? the decrease of magnetic flux density caused by ris- ing temperature in the sensor system is compen- sated by a built-in negative temperature coefficient of the magnetic characteristics ? ideal sensor for applications in extreme automotive and industrial environments ? emc corresponding to iso 7637 1.2. family overview the types differ according to the mode of switching and the magnetic switching points. unipolar switching sensors: the sensor turns to high current consumption with the magnetic south pole on the branded side of the pack- age and turns to low consumption if the magnetic field is removed. the sensor does not respond to the mag- netic north pole on the branded side. unipolar inverted switching sensors: the sensor turns to low current consumption with the magnetic south pole on the branded side of the pack- age and turns to high consumption if the magnetic field is removed. the sensor does not respond to the mag- netic north pole on the branded side. type switching behavior sensitivity see page 556 unipolar very high 18 560 unipolar inverted low 20 566 unipolar inverted very high 22
data sheet hal55x, hal56x micronas aug. 11, 2009; dsh000026_004en 5 1.3. marking code all hall sensors have a marking on the package sur- face (branded side). this marking includes the name of the sensor and the temperature range. 1.4. operating junction temperature range the hall sensors from micronas are specified to the chip temperature (junction temperature t j ). k: t j = ? 40 c to +140 c e: t j = ? 40 c to +100 c note: due to the high power dissipation at high current consumption, there is a difference between the ambient temperature (t a ) and junction tempera- ture. please refer to section 5.4. on page 25 for details. 1.5. hall sensor package codes hall sensors are available in a wide variety of packag- ing versions and quantities. for more detailed informa- tion, please refer to the brochure: ?hall sensors: ordering codes, packaging, handling?. 1.6. solderability and welding soldering during soldering reflow processing and manual reworking, a component body temperature of 260 c should not be exceeded. welding device terminals should be compatible with laser and resistance welding. please note that the success of the welding process is subject to different welding parameters which will vary according to the welding technique used. a very close control of the welding parameters is absolutely necessary in order to reach satisfying results. micronas, therefore, does not give any implied or express warranty as to the ability to weld the component. fig. 1?1: pin configuration type temperature range k e hal556 556k 556e hal560 560k 560e hal566 566k 566e halxxxpa-t temperature range: k or e package: sf for sot89b-1 ua for to92ua type: 556, 560, or 566 example: hal556ua-e type: 556 package: to92ua temperature range: t j = ? 40 c to +100 c 1 v dd 2 gnd 3 nc 4
hal55x, hal56x data sheet 6 aug. 11, 2009; dsh000026_004en micronas 2. functional description the hal55x, hal56x two-wire sensors are monolithic integrated circuits which switch in response to mag- netic fields. if a magnetic field with flux lines perpendic- ular to the sensitive area is applied to the sensor, the biased hall plate forces a hall voltage proportional to this field. the hall voltage is compared with the actual threshold level in the comparator. the temperature- dependent bias increases the supply voltage of the hall plates and adjusts the switching points to the decreasing induction of magnets at higher tempera- tures. if the magnetic field exceeds the threshold levels, the current source switches to the corresponding state. in the low current consumption state, the current source is switched off and the current consumption is caused only by the current through the hall sensor. in the high current consumption state, the current source is switched on and the current consumption is caused by the current through the hall sensor and the current source. the built-in hysteresis eliminates oscillation and provides switching behavior of the output signal without bouncing. magnetic offset caused by mechanical stress is com- pensated for by using the ?switching offset compensa- tion technique?. an internal oscillator provides a two- phase clock. in each phase, the current is forced through the hall plate in a different direction, and the hall voltage is measured. at the end of the two phases, the hall voltages are averaged and thereby the offset voltages are eliminated. the average value is compared with the fixed switching points. subse- quently, the current consumption switches to the corre- sponding state. the amount of time elapsed from crossing the magnetic switching level to switching of the current level can vary between zero and 1/f osc . shunt protection devices clamp voltage peaks at the v dd -pin together with external series resistors. reverse current is limited at the v dd -pin by an internal series resistor up to ? 15 v. no external protection diode is needed for reverse voltages ranging from 0 v to ? 15 v. fig. 2?1: hal55x, hal56x block diagram fig. 2?2: timing diagram (example hal56x) temperature dependent bias switch hysteresis control comparator current source v dd 1 clock hall plate gnd 2 hal55x, hal56x reverse voltage & overvoltage protection t i ddlow i dd 1/f osc = 6.9 s i ddhigh b b off f osc t t t i dd t b on
data sheet hal55x, hal56x micronas aug. 11, 2009; dsh000026_004en 7 3. specification 3.1. outline dimensions fig. 3?1: sot89b-1 : plastic s mall o utline t ransistor package, 4 leads, with two sensitive areas weight approximately 0.039 g
hal55x, hal56x data sheet 8 aug. 11, 2009; dsh000026_004en micronas fig. 3?2: to92ua-1 : plastic transistor standard ua package, 3 leads, spread weight approximately 0.106 g
data sheet hal55x, hal56x micronas aug. 11, 2009; dsh000026_004en 9 fig. 3?3: to92ua-2 : plastic transistor standard ua package, 3 leads, not spread weight approximately 0.106 g
hal55x, hal56x data sheet 10 aug. 11, 2009; dsh000026_004en micronas fig. 3?4: to92ua-1 : dimensions ammopack inline, spread
data sheet hal55x, hal56x micronas aug. 11, 2009; dsh000026_004en 11 fig. 3?1: to92ua-2 : dimensions ammopack inline, not spread
hal55x, hal56x data sheet 12 aug. 11, 2009; dsh000026_004en micronas 3.2. dimensions of sensitive area 0.25 mm 0.12 mm 3.3. positions of sensitive areas 3.4. absolute maximum ratings stresses beyond those listed in the ?absolute maximum ratings? may cause permanent damage to the device. this is a stress rating only. functional operation of the device at these conditions is not implied. exposure to absolute maximum rating conditions for extended periods will affect device reliability. this device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than abso- lute maximum-rated voltages to this circuit. all voltages listed are referenced to ground (gnd). 3.4.1. storage and shelf life the permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 c and a maximum of 85% relative humidity. at these conditions, no dry pack is required. solderability is guaranteed for one year from the date code on the package. sot89b-1 to92ua-1/-2 y 0.95 mm nominal 1.0 mm nominal a4 0.3 mm nominal 0.3 mm nominal d1 3.05 mm 50 m symbol parameter pin no. min. max. unit v dd supply voltage 1 ? 15 1)2) 28 2) v t j junction temperature range ? 40 170 c 1) ? 18 v with a 100 series resistor at pin 1 ( ? 16 v with a 30 series resistor) 2) as long as t j max is not exceeded
data sheet hal55x, hal56x micronas aug. 11, 2009; dsh000026_004en 13 3.5. recommended operating conditions functional operation of the device beyond those indicated in the ?recommended operating conditions? of this spec- ification is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime. all voltages listed are referenced to ground (gnd). note: due to the high power dissipation at high current consumption, there is a difference between the ambient tem- perature (t a ) and junction temperature. the power dissipation can be reduced by repeatedly switching the supply voltage on and off (pulse mode). please refer to section 5.4. on page 25 for details. symbol parameter pin no. min. max. unit v dd supply voltage 1 4 24 v t a ambient temperature for continuous operations ? 40 85 1) c 1) when using the ?k? type and v dd 16 v
hal55x, hal56x data sheet 14 aug. 11, 2009; dsh000026_004en micronas 3.6. characteristics at t j = ? 40 c to +140 c, v dd = 4 v to 24 v, gnd = 0 v, at recommended operation conditions if not otherwise specified in the column ?conditions?. typical characteristics for t j = 25 c and v dd = 12 v. fig. 3?1: recommended pad size sot89b-1 dimensions in mm symbol parameter pin no. min. typ. max. unit conditions i dd low current consumption over temperature range 123.35ma i dd high current consumption over temperature range 1 12 14.3 17 ma v ddz overvoltage protection at supply 1 ? 28.5 32 v i dd = 25 ma, t j = 25 c, t = 20 ms f osc internal oscillator chopper frequency ?? 145 ? khz t en(o) enable time of output after setting of v dd 1 ? 30 ? s 1) t r output rise time 1 ? 0.4 1.6 sv dd = 12 v, r s = 30 t f output fall time 1 ? 0.4 1.6 sv dd = 12 v, r s = 30 r thjsb case sot89b-1 thermal resistance junction to substrate backside ?? 150 200 k/w fiberglass substrate 30 mm x 10 mm x 1.5 mm, for pad size see fig. 3?1 r thja case to92ua-1, to92ua-2 thermal resistance junction to soldering point ?? 150 200 k/w 1) b > b on + 2 mt or b < b off - 2 mt for hal55x, b > b off + 2 mt or b < b on - 2 mt for hal56x 1.05 1.05 1.80 0.50 1.50 1.45 2.90
data sheet hal55x, hal56x micronas aug. 11, 2009; dsh000026_004en 15 3.7. magnetic characteristics overview at t j = ? 40 c to +140 c, v dd = 4.0 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. note: for detailed descriptions of the individual types, see pages 18 and following. sensor parameter on point b on off point b off hysteresis b hys unit switching type t j min. typ. max. min. typ. max. min. typ. max. hal556 ? 40 c 3.4 6.3 7.7 2.1 4.2 5.9 0.8 2.1 3 mt unipolar 25 c 3.4 6 7.4 2 3.8 5.7 0.5 1.8 2.8 mt 100 c 3.2 5.5 7.2 1.9 3.7 5.7 0.3 1.8 2.8 mt 140 c 3 5.2 7.4 1.2 3.6 6 0.2 1.6 3 mt hal560 ? 40 c41 46.5524753594 6.510 mt unipolar 25 c 41 46.6 52 46 52.5 58.5 3 6 9 mt inverted 100 c 41 45.7 52 45 41.1 57.5 2 5.4 8 mt 140 c 39 44.8 51 43.5 49.8 56.5 2 5 8 mt hal566 ? 40 c 2.1 4 5.9 3.4 6 7.7 0.8 2 2.8 mt unipolar 25 c 2 3.9 5.7 3.4 5.9 7.2 0.5 2 2.7 mt inverted 100 c 1.85 3.8 5.7 3.25 5.6 7 0.3 1.8 2.6 mt 140 c 1.3 3.6 7.3 2.6 5.2 7.3 0.2 1.6 3 mt
hal55x, hal56x data sheet 16 aug. 11, 2009; dsh000026_004en micronas ? 15 ? 5 5 15 25 35 ? 20 ? 15 ? 10 ? 5 0 5 10 15 20 25 v t a = ? 40 c t a = 25 c t a = 100 c t a = 140 c ma i dd v dd hal 55x, hal 56x i dd high i dd low fig. 3?2: typical supply current versus supply voltage 0123456 0 2 4 6 8 10 12 14 16 18 20 v ma i dd v dd hal 55x, hal 56x i dd high i dd low t a = ? 40 c t a = 25 c t a = 100 c t a = 140 c fig. 3?3: typical supply current versus supply voltage ? 50 0 50 100 150 200 0 2 4 6 8 10 12 14 16 18 20 c i ddhigh i ddlow v dd = 4 v v dd = 12 v v dd = 24 v ma i dd hal 55x, hal 56x t a fig. 3?4: typical supply current versus ambient temperature ? 50 0 50 100 150 200 0 20 40 60 80 100 120 140 160 180 200 c t a v dd = 4 v v dd = 12 v v dd = 24 v f osc khz hal 55x, hal 56x fig. 3?5: typ. internal chopper frequency versus ambient temperature
data sheet hal55x, hal56x micronas aug. 11, 2009; dsh000026_004en 17 0 5 10 15 20 25 30 0 20 40 60 80 100 120 140 160 180 200 v v dd t a = ? 40 c t a = 25 c t a = 100 c t a = 140 c khz hal 55x, hal 56x f osc fig. 3?6: typ. internal chopper frequency versus supply voltage 345678 0 20 40 60 80 100 120 140 160 180 200 v v dd t a = ? 40 c t a = 25 c t a = 100 c t a = 140 c khz hal 55x, hal 56x f osc fig. 3?7: typ. internal chopper frequency versus supply voltage
hal55x, hal56x data sheet 18 aug. 11, 2009; dsh000026_004en micronas 4. type description 4.1. hal556 the hal556 is a very sensitive unipolar switching sen- sor (see fig. 4?1). the sensor turns to high current consumption with the magnetic south pole on the branded side of the pack- age and turns to low current consumption if the mag- netic field is removed. it does not respond to the mag- netic north pole on the branded side. for correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. in the hal55x, hal56x two-wire sensor family, the hal566 is a sensor with the same magnetic charac- teristics but with an inverted output characteristic. magnetic features: ? switching type: unipolar ? very high sensitivity ?typical b on : 6 mt at room temperature ?typical b off : 4 mt at room temperature ? operates with static magnetic fields and dynamic magnetic fields up to 10 khz applications the hal556 is designed for applications with one magnetic polarity and weak magnetic amplitudes at the sensor position such as: ? applications with large airgap or weak magnets, ? solid state switches, ? contactless solutions to replace micro switches, ? position and end point detection, and ? rotating speed measurement. fig. 4?1: definition of magnetic switching points for the hal556 magnetic characteristics at t j = ? 40 c to +140 c, v dd = 4 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. the hysteresis is the difference between the switching points b hys = b on ? b off the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2 b off b on 0 i ddhigh i ddlow current consumption b b hys parameter on point b on off point b off hysteresis b hys magnetic offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. ? 40 c 3.4 6.3 7.7 2.1 4.2 5.9 0.8 2.1 3 5.2 mt 25 c 3.4 6 7.4 2 3.8 5.7 0.5 1.8 2.8 2.7 4.9 6.5 mt 100 c 3.2 5.5 7.2 1.9 3.7 5.7 0.3 1.8 2.8 4.6 mt 140 c 3 5.2 7.4 1.2 3.6 6 0.2 1.6 3 4.4 mt
data sheet hal55x, hal56x micronas aug. 11, 2009; dsh000026_004en 19 note: in the diagram ?magnetic switching points ver- sus temperature?, the curves for b on min, b on max, b off min, and b off max refer to junction temperature, whereas typical curves refer to ambient temperature. 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 b on b off t a = ? 40 c t a = 25 c t a = 100 c t a = 140 c v mt b on b off hal 556 v dd fig. 4?2: typ. magnetic switching points versus supply voltage 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 1 2 3 4 5 6 7 8 b on b off t a = ? 40 c t a = 25 c t a = 100 c t a = 140 c v mt b on b off hal 556 v dd fig. 4?3: typ. magnetic switching points versus supply voltage ? 50 0 50 100 150 200 0 1 2 3 4 5 6 7 8 c b on max b off max b on typ b off typ b on min b off min v dd = 4 v v dd = 12 v v dd = 24 v mt b on b off t a , t j hal 556 fig. 4?4: magnetic switching points versus temperature
hal55x, hal56x data sheet 20 aug. 11, 2009; dsh000026_004en micronas 4.2. hal560 the hal560 is a low-sensitive unipolar switching sen- sor with an inverted output (see fig. 4?5). the sensor turns to low current consumption with the magnetic south pole on the branded side of the pack- age and turns to high current consumption if the mag- netic field is removed. it does not respond to the mag- netic north pole on the branded side. for correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. magnetic features: ? switching type: unipolar inverted ? low sensitivity ?typical b on : 45.6 mt at room temperature ?typical b off : 51.7 mt at room temperature ? operates with static magnetic fields and dynamic magnetic fields up to 10 khz applications the hal560 is designed for applications with one magnetic polarity and strong magnetic amplitudes at the sensor position where an inverted output signal is required such as: ? applications with strong magnets, ? solid state switches, ? contactless solutions to replace micro switches, ? position and end point detection, and ? rotating speed measurement. fig. 4?5: definition of magnetic switching points for the hal560 magnetic characteristics at t j = ? 40 c to +140 c, v dd = 4 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. the hysteresis is the difference between the switching points b hys = b on ? b off the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2 b on b off 0 i ddhigh i ddlow current consumption b b hys parameter on point b on off point b off hysteresis b hys magnetic offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. ? 40 c 41 46.5 52 47 53 59 4 6.5 10 49.8 mt 25 c 41 46.5 52 46 52.5 58.5 3 6 9 49.5 mt 100 c 41 45.7 52 45 51.1 57.5 2 5.4 8 48.4 mt 140 c 39 44.8 51 43.5 49.8 56.5 2 5 8 47.3 mt
data sheet hal55x, hal56x micronas aug. 11, 2009; dsh000026_004en 21 note: in the diagram ?magnetic switching points ver- sus temperature?, the curves for b on min, b on max, b off min, and b off max refer to junction temperature, whereas typical curves refer to ambient temperature. 30 35 40 45 50 55 60 0 5 10 15 20 25 30 v mt v dd b on b off hal 560 b on b off t a = ?40 c t a = 25 c t a = 100 c t a = 140 c fig. 4?6: typ. magnetic switching points versus supply voltage 30 35 40 45 50 55 60 3 3.5 4.0 4.5 5.0 5.5 6.0 v mt v dd b on b off hal 560 b on b off t a = ?40 c t a = 25 c t a = 100 c t a = 140 c fig. 4?7: typ. magnetic switching points versus supply voltage 30 35 40 45 50 55 60 ?50 0 50 100 150 200 c mt t a , t j b on b off b on max b on typ b on min b off max b off typ b off min hal 560 v dd = 4 v v dd = 12 v v dd = 24 v fig. 4?8: magnetic switching points versus temperature
hal55x, hal56x data sheet 22 aug. 11, 2009; dsh000026_004en micronas 4.3. hal566 the hal566 is a very sensitive unipolar switching sen- sor with an inverted output (see fig. 4?9). the sensor turns to low current consumption with the magnetic south pole on the branded side of the pack- age and turns to high current consumption if the mag- netic field is removed. it does not respond to the mag- netic north pole on the branded side. for correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. in the hal55x, hal56x two-wire sensor family, the hal556 is a sensor with the same magnetic charac- teristics but with a normal output characteristic. magnetic features: ? switching type: unipolar inverted ? high sensitivity ?typical b on : 4 mt at room temperature ?typical b off : 5.9 mt at room temperature ? operates with static magnetic fields and dynamic magnetic fields up to 10 khz applications the hal566 is designed for applications with one magnetic polarity and weak magnetic amplitudes at the sensor position where an inverted output signal is required such as: ? applications with large airgap or weak magnets, ? solid state switches, ? contactless solutions to replace micro switches, ? position and end point detection, and ? rotating speed measurement. fig. 4?9: definition of magnetic switching points for the hal566 magnetic characteristics at t j = ? 40 c to +140 c, v dd = 4 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. the hysteresis is the difference between the switching points b hys = b on ? b off the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2 b on b off 0 i ddhigh i ddlow current consumption b b hys parameter on point b on off point b off hysteresis b hys magnetic offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. ? 40 c 2.1 4 5.9 3.4 6 7.7 0.8 2 2.8 ? 5 ? mt 25 c 2 3.9 5.7 3.4 5.9 7.2 0.5 2 2.7 3 4.9 6.2 mt 100 c 1.85 3.8 5.7 3.25 5.6 7 0.3 1.8 2.6 ? 4.7 ? mt 140 c 1.3 3.6 6 2.6 5.2 7.3 0.2 1.6 3 ? 4.4 ? mt
data sheet hal55x, hal56x micronas aug. 11, 2009; dsh000026_004en 23 note: in the diagram ?magnetic switching points ver- sus temperature?, the curves for b on min, b on max, b off min, and b off max refer to junction temperature, whereas typical curves refer to ambient temperature. 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 b on b off t a = ? 40 c t a = 25 c t a = 100 c t a = 140 c v mt b on b off hal 566 v dd fig. 4?10: typ. magnetic switching points versus supply voltage 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 1 2 3 4 5 6 7 8 b on b off t a = ? 40 c t a = 25 c t a = 100 c t a = 140 c v mt b on b off hal 566 v dd fig. 4?11: typ. magnetic switching points versus supply voltage ? 50 0 50 100 150 200 0 1 2 3 4 5 6 7 8 c b on max b off max b on typ b off typ b on min b off min v dd = 4 v v dd = 12 v v dd = 24 v mt b on b off t a , t j hal 566 fig. 4?12: magnetic switching points versus temperature
hal55x, hal56x data sheet 24 aug. 11, 2009; dsh000026_004en micronas 5. application notes 5.1. application circuit figure 5?1 shows a simple application with a two-wire sensor. the current consumption can be detected by measuring the voltage over r l . for correct functioning of the sensor, the voltage between pin 1 and 2 (v dd ) must be a minimum of 4 v. with the maximum current consumption of 17 ma, the maximum r l can be calcu- lated as: fig. 5?1: application circuit 1 for applications with disturbances on the supply line or radiated disturbances, a series resistor r v (ranging from 10 to 30 ) and a capacitor both placed close to the sensor are recommended (see fig. 5?2). in this case, the maximum r l can be calculated as: fig. 5?2: application circuit 2 5.2. extended operating conditions all sensors fulfill the electrical and magnetic character- istics when operated within the recommended oper- ating conditions (see page 13). typically, the sensors operate with supply voltages above 3 v. however, below 4 v, the current consump- tion and the magnetic characteristics may be outside the specification. note: the functionality of the sensor below 4 v is not tested on a regular base. for special test condi- tions, please contact micronas. 5.3. start-up behavior due to the active offset compensation, the sensors have an initialization time (enable time t en(o) ) after applying the supply voltage. the parameter t en(o) is specified in the electrical characteristics (see page 14). during the initialization time, the current con- sumption is not defined and can toggle between low and high. hal55x: after t en(o) , the current consumption will be high if the applied magnetic field b is above b on . the current consumption will be low if b is below b off . hal56x: in case of sensors with an inverted switching behavior, the current consumption will be low if b > b off and high if b < b on . note: for magnetic fields between b off and b on , the current consumption of the hal sensor will be either low or high after applying v dd . in order to achieve a defined current consumption, the applied magnetic field must be above b on , respectively, below b off . r lmax v supmin 4v ? 17ma -------------------------------- - = 2 or gnd x v sup v sig r l r lmax v supmin 4v ? 17ma -------------------------------- - r v ? = 1 v dd 2 or gnd x v sup v sig r l r v 4.7 nf
data sheet hal55x, hal56x micronas aug. 11, 2009; dsh000026_004en 25 5.4. ambient temperature due to internal power dissipation, the temperature on the silicon chip (junction temperature t j ) is higher than the temperature outside the package (ambient temper- ature t a ). under static conditions and continuous operation, the following equation applies: for all sensors, the junction temperature range t j is specified. the maximum ambient temperature t amax can be calculated as: for typical values, use the typical parameters. for worst case calculation, use the max. parameters for i dd and r th , and the max. value for v dd from the appli- cation. due to the range of i ddhigh , self-heating can be critical. the junction temperature can be reduced with pulsed supply voltage. for supply times (t on ) ranging from 30 s to 1 ms, the following equation can be used: 5.5. emc and esd for applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see fig. 5?3). the series resistor and the capacitor should be placed as closely as pos- sible to the hal sensor. applications with this arrangement passed the emc tests according to the product standard iso 7637. please contact micronas for the detailed investigation reports with the emc and esd results. fig. 5?3: recommended emc test circuit t j t a t + = ti dd v dd r th = t amax t jmax t ? = t i dd v dd r th t on t off t on + ------------------- - = 1 v dd 2gnd v emc 4.7 nf r v2 30 r v1 100
hal556, hal560, hal566 data sheet 26 aug. 11, 2009; dsh000026_004en micronas micronas gmbh hans-bunte-strasse 19 ? d-79108 freiburg ? p.o. box 840 ? d-79008 freiburg, germany tel. +49-761-517-0 ? fax +49-761-517-2174 ? e-mail: docservice@micronas.com ? internet: www.micronas.com 6. data sheet history 1. data sheet: ?hal54x hall-effect sensor family?, nov. 27, 2002, 6251-605-1ds. first release of the data sheet. 2. data sheet: ?hal556, hal560, hal566, two-wire hall-effect sensor family, aug. 3, 2000, 6251-425-2ds. second release of the data sheet. major changes: ? magnetic characteristics for hal556 and hal560 changed. please refer to pages 12 and 14 for details. ? new temperature ranges ?k? and ?a? added ? temperature range ?c? removed ? outline dimensions for sot-89b: reduced toler- ances ? smd package sot-89a removed 3. data sheet: ?hal556, hal560, hal566, two-wire hall-effect sensor family, jan. 28, 2003, 6251-425-3ds. third release of the data sheet. major changes: ? temperature range ?a? removed ? outline dimensions for to-92ua changed 4. data sheet: ?hal556, hal560, hal566, two-wire hall-effect sensor family, may 14, 2004, 6251-425-4ds (dsh000026_001en). fourth release of the data sheet. major changes: ? new package diagrams for sot89b-1 and to92ua-1 ? package diagram for to92ua-2 added ? ammopack diagrams for to92ua-1/-2 added 5. data sheet: ?hal556, hal566 two-wire hall- effect sensor family?, dec. 19, 2008, dsh000026_002en. fifth release of the data sheet. major changes: ? section 1.6. on page 5 ?solderability and welding updated ? all package diagrams updated ? recommended footprint sot89b-1 added ? hal 560 removed. 6. data sheet: ?hal556, hal560, hal566 two-wire hall-effect sensor family?, feb. 12, 2009, dsh000026_004en. sixth release of the data sheet. minor changes: ? section 3.3. ?positions of sensitive areas? updated (parameter a4 for sot89b-1 was added). 7. data sheet: ?hal556, hal560, hal566 two-wire hall-effect sensor family?, july 30, 2009, dsh000026_004en. seventh release of the data sheet. major changes: ? package outlines updated ? hal 560 added.

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